mixers - triple-balanced - chip 1 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz general description features functional diagram passive: no dc bias required high input ip3: 20 dbm high lo/rf isolation: 45 db high 2lo/if isolation: 50 db wide if bandwidth: 16 - 22 ghz upconversion & downconversion applications die size: 1.14 x 1.1 x 0.1 mm electrical specifcations, t a = +25 c, lo = 9 ghz, lo = +13 dbm [2] typical applications the HMC1015 is ideal for: ? point-to-point radios ? point-to-multi-point radios & vsat ? test equipment & sensors ? military end-use the HMC1015 is a general purpose triple balanced mixer chip that can be used as a frequency converter with 16 to 22 ghz at the if port and 26 to 32 ghz at the rf port. this mixer requires no external components or matching circuitry. the HMC1015 provides excellent lo/rf, lo/if and 2lo/if isolation due to optimized balun structures. the mixer operates with lo drive levels from +9 dbm to +15 dbm. the HMC1015 wideband mixer exhibits consistent conversion gain and compression across its band- width. parameter min. typ. max. units rf frequency range 26 - 32 ghz if frequency range 16- 22 ghz lo frequency range 7 - 11 ghz conversion loss 10 13 db lo to rf isolation [1] 45 db lo to if isolation [1] 31 db 2lo to if isolation [1] 50 db rf to if isolation 35 db ip3 (input) 22 dbm 1 db gain compression (input) 10 dbm [1] fixed if = 17 ghz . [2] unless otherwise noted , all measurements performed as an upconverter with lo = 9 ghz . for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - triple-balanced - chip 2 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz conversion gain vs. temperature, upconverter, lo= 7 ghz conversion gain vs. temperature upconverter, lo= 9 ghz conversion gain vs. temperature, upconverter, lo= 11 ghz conversion gain vs. lo power, upconverter, lo= 7 ghz conversion gain vs. lo power, upconverter, lo= 9 ghz conversion gain vs. lo power, upconverter, lo= 11 ghz -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 31 32 33 34 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 31 32 33 34 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 31 32 33 34 35 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) rf frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - triple-balanced - chip 3 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz input ip3 vs. temperature, upconverter, lo= 7 ghz input ip3 vs. temperature, upconverter, lo= 9 ghz input ip3 vs. temperature, upconverter, lo= 11 ghz input ip3 vs. lo power, upconverter, lo= 7 ghz input ip3 vs. lo power, upconverter, lo= 9 ghz input ip3 vs. lo power, upconverter, lo= 11 ghz 5 10 15 20 25 30 24 25 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) 5 10 15 20 25 30 24 25 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) 5 10 15 20 25 30 24 25 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) 5 10 15 20 25 30 24 25 26 27 28 29 30 31 32 33 34 +9 dbm +11 dbm +13 dbm +15 dbm ip3(dbm) rf frequency (ghz) 5 10 15 20 25 30 24 25 26 27 28 29 30 31 32 33 34 +9 dbm +11 dbm +13 dbm +15 dbm ip3(dbm) rf frequency (ghz) 5 10 15 20 25 30 24 25 26 27 28 29 30 31 32 33 34 +9 dbm +11 dbm +13 dbm +15 dbm ip3(dbm) rf frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - triple-balanced - chip 4 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz rf and if return loss lo return loss isolation lo/if, lo/rf, 2lo/if isolation rf/if input p1db vs. temperature @ lo= 9 ghz -40 -30 -20 -10 0 6 8 10 12 14 16 9 dbm 11 dbm 13 dbm 15 dbm return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 15 19 23 27 31 35 rf if return loss (db) frequency (ghz) -90 -80 -70 -60 -50 -40 -30 -20 -10 6 7 8 9 10 11 12 isolation (db) lo frequency (ghz) lo/rf lo/if 2lo/if -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 33 34 isolation (db) rf frequency (ghz) rf/if 2 4 6 8 10 12 14 24 25 26 27 28 29 30 31 32 33 34 +25c +85c -40c p1db (dbm) rf frequency (ghz) input p1db vs. lo power @ lo= 9 ghz 2 4 6 8 10 12 14 24 25 26 27 28 29 30 31 32 33 34 +9 dbm +11 dbm +13 dbm +15 dbm p1db (dbm) rf frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - triple-balanced - chip 5 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz outline drawing table 1. absolute maximum ratings rf / if input (lo = +18 dbm) 15.5 dbm lo drive 20 dbm maximum junction temperature 150 c continuous pdiss (ta = 85 c) (derate 2.5 mw/c above 85 c) 79 mw thermal resistance (r th ) (junction to die bottom) 392 c/w operating temperature -55 c to +85c storage temperature -65 c to 125c table 2. die packaging information [1] standard alternate gp-1 (gel pack) [2] [1] for more information refer to the packaging information document in the product support section of our website. [2] for alternate packaging information contact hittite microwave corporation. notes: 1. all dimensions are in inches [mm]. 2. die thickness is 0.004 3. bond pads 1, 2 & 3 are 0.0059 [0.150] x 0.0039 [0.099]. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. 8. o verall die size 0 .002 electrostatic sensitive device observe handling precautions for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - triple-balanced - chip 6 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz table 3. pad descriptions pad number function description pad schematic 1 rf this pad is ac coupled and matched to 50 ohms. 2 if this pad is ac coupled and matched to 50 ohms. 3 lo this pad is ac coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - triple-balanced - chip 7 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec - tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - triple-balanced - chip 8 HMC1015 v 0 0.0 811 gaas mmic fundamental mixer, 26 - 32 ghz notes: for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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